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ECO-PACTM 2 IGBT Module
Short Circuit SOA Capability Square RBSOA
Preliminary Data Sheet
PSIG 50/06 PSI 50/06* PSIS 50/06* PSSI 50/06*
IC25 = 42.5 A VCES = 600 V VCE(sat)typ. = 2.4 V
LN 9 S18 A1 JK 10
PSIG
OP 9 L9
PSI
PSIG 50/06 IGBTs
Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol
PSI 50/06*
PSSI 50/06*
PSIS 50/06*
*NTC optional
E2 G H 10 K 10 NTC X 16 VX 18 X 15 X 13
Conditions TVJ = 25C to 150C
Maximum Ratings 600 20 V V A A A
X 15 IK 10 NTC X 16 L9 F1 AC 1 R S 18
PSSI
TC = 25C TC = 80C VGE = 15 V; RG = 33 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 33 ; TVJ = 125C non-repetitive TC = 25C Conditions
42.5 29 60 VCES 10 130
AC 1
PSIS
s W
L9 T 16 X 15 NTC R S 18 IK 1 0 X 16
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.4 2.9 4.5 2.9 6.5 0.6 1.7 100 50 50 270 40 1.4 1.0 16 1.92 V V V mA mA nA ns ns ns ns mJ mJ nF 0.96 K/W K/W
Features
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH
IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.7 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C
* * * * * * * * * * * * * * * *
Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL registered, E 148688
VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 30 A VGE = 15/0 V; RG = 33
Applications
AC and DC motor control AC servo and robot drives power supplies welding inverters
VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT)
with heatsink compound (0.42 K/m.K; 50 m)
Advantages
Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Leads with expansion bend for stress relief
Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
(c) 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 50/06
Reverse diodes (FRED)
Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 30 A; TVJ = 25C TVJ = 125C IF = 15 A; diF/dt = 400 A/s; TVJ = 125C VR = 300 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 m)
Package style and outline Maximum Ratings 30 19 A A
Dimensions in mm (1mm = 0.0394")
PSIG
Characteristic Values min. typ. max. 2.57 1.8 7 50 4.6 2.84 V V A ns 2.3 K/W K/W
Temperature Sensor NTC
Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K PSI Conditions Maximum Ratings -40...+150 -40...+150 IISOL 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2
Module
Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight
Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g
PSIS
PSSI
(c) 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 50/06
90
A 75 IC
90 A 75
VGE= 17V 15V 13V
IC 60
TJ = 25C 11V
60 45 30 15 0 0
VGE = 17 V 15 V 13 V 11V
45 30
TJ = 125C
9V
25T60
9V
15 0
25T60
1
2
3
4
VCE
5
V
6
0
1
2
3
4
VCE
5V
6
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
90
A 75 IC
VCE = 20V
90 A 75 IF 60 45
TJ = 125C TJ = 25C
60 45 30
TJ = 125C TJ = 25C
30 15
25T60
15 0 4 6 8 10 12
VGE
0
25T60
14 V 16
0,0
0,5
1,0
VF
1,5
V
2,0
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
50 40 A
IRM
20
V
150 120 ns 90
TJ = 125C VR = 300 V IF = 30 A IRM
15
VGE
trr
trr
30 10
VCE = 300 V IC = 30 A
20 10
25T60
60 30
MUBW3006A7
5
0 0 40 80 120
QG nC
0 0 200 400 600
-di/dt
0
160
800 A/s
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
(c) 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 50/06
8
VCE = 300V mJ VGE = 15V
80 tr td(on) Eon ns 60 t 40
2,0
mJ Eoff 1,5
VCE = 300V VGE = 15V TVJ = 125C
Eoff
400 ns 300 t
Eon
R = 33 6G TVJ = 125C
4
1,0 RG = 33
td(off) 200
2
20
0,5
tf
100
0 0 20 40
IC
25T60
0
0,0
0 20 40 IC
25T60
0
60 A
60 A
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current
2,0
VCE = 300 V mJ V = 15 V GE I = 30 A 1,5 C TVJ = 125C
Eon
VCE = 300V mJ VGE = 15V = 30A I 3C TVJ = 125C
4
td(on)
80 ns
400 td(off) ns 300 Eoff t
tr Eon
60
t
Eoff
2
1,0
40
200
1
0,5
tf
100
0 0 10 20 30 40 50
RG
25T60
20
0,0 0 10 20 30 40 50
RG
25T60
0
60
70 80
60
70 80
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor
10 K/W ZthJC 1
IGBT diode
80
A ICM
60
0,1
40
0,01
20
RG = 33 TVJ = 125C
0,001
25T60
single pulse
0 0 100 200 300 400 500 600
VCE
700 V
0,0001 0,00001 0,0001 0,001
VDI...50-06P1
0,01
0,1 t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance RBSOA
(c) 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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